Semiconductor device

ABSTRACT

Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL 1  and a wiring M 2  formed on an interlayer insulator IL 2 , a wiring M 3  formed on an interlayer insulator IL 3 , and a coil CL 2  and a wiring M 4  formed on the interlayer insulator IL 4 . Moreover, a distance DM 4  between the coil CL 2  and the wiring M 4  is longer than a distance DM 3  between the coil CL 2  and the wiring M 3  (DM 4 &gt;DM 3 ). Furthermore, the distance DM 3  between the coil CL 2  and the wiring M 3  is set to be longer than a sum of a film thickness of the interlayer insulator IL 3  and a film thickness of the interlayer insulator IL 4 , which are positioned between the coil CL 1  and the coil CL 2 . In this manner, it is possible to improve an insulation withstand voltage between the coil CL 2  and the wiring M 4  or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region  1 A and a seal ring formation region  1 C surrounding a peripheral circuit formation region  1 B are formed so as to improve the moisture resistance.

TECHNICAL FIELD

The present invention relates to a semiconductor device, and moreparticularly relates to technique effectively applied to, for example, asemiconductor device having a coil.

BACKGROUND

As technique of transmitting an electric signal between two circuits towhich electric signals having different electric potentials areinputted, respectively, technique using a photocoupler has been known.The photocoupler is provided with a light-emitting element, such as alight emitting diode, and a light-receiving element, such as aphototransistor, and by converting an inputted electric signal intolight by the light-emitting element, as well as by returning the lightinto an electric signal by the light-receiving element, the electricsignal is transmitted.

Moreover, a technique in which electric signals are transmitted byinductively coupling two coils with each other has been developed. Forexample, Patent Document 1 (Japanese Patent Application Laid-OpenPublication No. 2009-302418) discloses a circuit device provided with afirst coil, a first insulating layer and a second coil.

Furthermore, Patent Document 2 (Japanese Patent Application Laid-OpenPublication No. 2003-309184) discloses a composite module in which acoil and a capacitor are formed on the same substrate so that aplurality of stacked coil patterns are provided.

In addition, Patent Document 3 (Japanese Patent Application Laid-OpenPublication No. 2009-141011), Patent Document 4 (Japanese PatentApplication Laid-Open Publication No. 2004-311655) and

Patent Document 5 (Japanese Patent Application Laid-Open Publication No.2004-281838) respectively disclose a seal ring, a metal fence and aguard ring.

CITATION LIST

Patent Document 1: Japanese Patent Application Laid-Open Publication No.2009-302418

Patent Document 2: Japanese Patent Application Laid-Open Publication No.2003-309184

Patent Document 3: Japanese Patent Application Laid-Open Publication No.2009-141011

Patent Document 4: Japanese Patent Application Laid-Open Publication No.2004-311655

Patent Document 5: Japanese Patent Application Laid-Open Publication No.2004-281838

SUMMARY Problems to be Solved by the Invention

For example, as technique of transmitting an electric signal between twocircuits whose electric signals to be inputted thereto have mutuallydifferent electric potentials, the technique using the above-mentioned“photocoupler” has been proposed. However, since the photocoupler has alight-emitting element and a light-receiving element, it is difficult toachieve downsizing. Moreover, the application of the photocoupler haslimitations in that, when an electric signal has a high frequency, itbecomes impossible to follow the electric signal, and in that it is notpossible to carry out operations under a high temperature of 125° C. ormore.

On the other hand, by a semiconductor device that transmits an electricsignal by inductively coupling two coils with each other, since thecoils can be formed by utilizing a micro-processing technique of asemiconductor device, the downsizing of the device can be achieved withsuperior electrical characteristics; thus, the development of such adevice is demanded.

For this reason, also as to the semiconductor device that transmits anelectric signal by inductively coupling two coils with each other, thereis a strong demand for improving its performances as much as possible.

The above and other preferred aims and novel characteristics of thepresent invention will be apparent from the description of the presentspecification and the accompanying drawings.

Means for Solving the Problems

The typical ones of the inventions disclosed in the present applicationwill be briefly described as follows.

A semiconductor device described in one embodiment disclosed in thepresent application includes a first coil and a first wiring formed on afirst insulating film, a second insulating film formed on the first coiland the first wiring, a second wiring formed on the second insulatingfilm, a third insulating film formed on the second wiring, and a secondcoil and a third wiring formed on the third insulating film. Moreover, adistance between the second coil and the third wiring is made longerthan the distance between the second coil and the second wiring.Furthermore, a distance between the second coil and the second wiring isset to a sum of the film thicknesses or more of the second insulatingfilm and the third insulating film located between the first coil andthe second coil.

Effects of the Invention

In accordance with semiconductor devices indicated by typicalembodiments described below, which are disclosed by the presentapplication, it becomes possible to improve characteristics of thesemiconductor device.

BRIEF DESCRIPTIONS OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating a configuration of asemiconductor device in accordance with a first embodiment;

FIG. 2 is a cross-sectional view illustrating the configuration of thesemiconductor device of the first embodiment;

FIG. 3 is a plan view illustrating an example of the configuration of acoil of the semiconductor device of the first embodiment;

FIG. 4 is a plan view illustrating the configuration of thesemiconductor device of the first embodiment;

FIG. 5 is a cross-sectional view illustrating a configuration in thevicinity of a coil on an upper layer;

FIG. 6 is a plan view illustrating the configuration in the vicinity ofthe coil on an upper layer;

FIG. 7 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device of the first embodiment;

FIG. 8 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 7;

FIG. 9 is a cross-sectional view illustrating a manufacturing process ofthe semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 8;

FIG. 10 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 9;

FIG. 11 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 10;

FIG. 12 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 11;

FIG. 13 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 12;

FIG. 14 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 13;

FIG. 15 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 14;

FIG. 16 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 15;

FIG. 17 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 16;

FIG. 18 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 17;

FIG. 19 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 18;

FIG. 20 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 19;

FIG. 21 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 20;

FIG. 22 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 21;

FIG. 23 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 22;

FIG. 24 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 23;

FIG. 25 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 24;

FIG. 26 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 25;

FIG. 27 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 26;

FIG. 28 is a cross-sectional view illustrating a manufacturing processof the semiconductor device of the first embodiment, illustrating amanufacturing process continued from FIG. 27;

FIG. 29 is a block diagram illustrating a configuration of asemiconductor device in accordance with a second embodiment;

FIG. 30 is a plan view illustrating the configuration of thesemiconductor device of the second embodiment;

FIG. 31 is a plan view illustrating a configuration of a coil inaccordance with a first application example of a third embodiment;

FIG. 32 is a plan view illustrating another configuration of the coil inaccordance with the first application example of the third embodiment;

FIG. 33 is a cross-sectional view illustrating main parts of asemiconductor device in the case of using a twin coil;

FIG. 34 is a plan view illustrating main parts of the semiconductordevice in the case of using the twin coil;

FIG. 35 is a plan view illustrating an example of a configuration of asemiconductor device (package) in the case of using the twin coil;

FIG. 36 is a cross-sectional view illustrating main parts of aconfiguration in accordance with a second application example of thethird embodiment;

FIG. 37 is a plan view illustrating a configuration of a coil inaccordance with a third application example of the third embodiment;

FIGS. 38A and 38B are diagrams illustrating a relationship between ashape of an opening on a pad region and a shape of a wiring;

FIG. 39 is a diagram illustrating a cross-sectional shape of the openingon the pad region;

FIG. 40 is a cross-sectional view illustrating a configuration of asemiconductor device in accordance with a fourth embodiment;

FIG. 41 is a plan view illustrating a shape of a dummy wiring of thesemiconductor device of the fourth embodiment;

FIG. 42 is a cross-sectional view illustrating another configuration ofthe semiconductor device of the fourth embodiment;

FIG. 43 is a block diagram illustrating a configuration of asemiconductor device in accordance with a fifth embodiment;

FIG. 44 is a plan view illustrating the configuration of thesemiconductor device of the fifth embodiment; and

FIG. 45 is a plan view illustrating the configuration of thesemiconductor device of the fifth embodiment.

DETAILED DESCRIPTION

In the embodiments described below, the invention will be described in aplurality of sections or embodiments when required as a matter ofconvenience. However, these sections or embodiments are not irrelevantto each other unless otherwise stated, and the one relates to the entireor a part of the other as a modification example, details, or asupplementary explanation thereof. Also, in the embodiments describedbelow, when referring to the number of elements (including number ofpieces, values, amount, range, and the like), the number of the elementsis not limited to a specific number unless otherwise stated or exceptthe case where the number is apparently limited to a specific number inprinciple. The number larger or smaller than the specified number isalso applicable.

Further, in the embodiments described below, it goes without saying thatthe components (including element steps) are not always indispensableunless otherwise stated or except the case where the components areapparently indispensable in principle. Similarly, in the embodimentsdescribed below, when the shape of the components, positional relationthereof, and the like are mentioned, the substantially approximate andsimilar shapes and the like are included therein unless otherwise statedor except the case where it is conceivable that they are apparentlyexcluded in principle. The same goes for the numerical value etc.(including number of pieces, values, amount, range, and the like)mentioned above.

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that componentshaving the same function are denoted by the same reference symbolsthroughout the drawings for describing the embodiment, and therepetitive description thereof will be omitted. Also, when there are aplurality of similar parts (portions), an individual or specific partmay be denoted by a generic reference added with a symbol. In addition,the description of the same or similar portions is not repeated inprinciple unless particularly required in the following embodiments.

Moreover, in some drawings used in the embodiments, hatching may beomitted even in a cross-sectional view so as to make the drawings easyto see. Also, hatching may be used even in a plan view so as to make thedrawings easy to see.

Moreover, in the cross-sectional views and plan views, the sizes of therespective portions do not necessarily correspond to those of actualdevices, and for a better understanding of the drawings, specificportions are sometimes illustrated with relatively larger sizes.Furthermore, even in the case when the plan view and the cross-sectionalview correspond to each other, the respective portions are sometimesillustrated, with the sizes of the respective portions being changed.

First Embodiment Explanation of Configuration

FIG. 1 is a schematic diagram illustrating a configuration of asemiconductor device in accordance with the present embodiment. Thesemiconductor device shown in FIG. 1 is a semiconductor device in whichtwo chips (CH1 and CH2) are installed as one package.

The chip (semiconductor chip, semiconductor piece) CH1 is mounted on adie pad DP1. The chip CH1 is provided with a transformer composed of acoil (inductor) CL1 on a lower layer, and a coil (inductor) CL2 of anupper layer. The coil CL2 of the upper layer is connected to a padregion PD2 of the chip CH2 through a wire W. The coil CL1 of the lowerlayer is connected to a peripheral circuit PC through a wiring notillustrated. On the peripheral circuit PC, a logic circuit constitutedby elements (active elements) such as MISFETs is formed. The peripheralcircuit PC is connected to a pad region PD2 disposed on an end portionof the chip CH1 through a wiring, not illustrated. The pad region PD2 isconnected to a low voltage region LC having a circuit that can be drivenat a low voltage (for example, 50V or less) through a wire W and a leador the like, not illustrated.

The chip CH2 is mounted on a die pad DP2. The chip CH2 is provided witha transformer composed of a coil CL1 of a lower layer and a coil CL2 ofan upper layer. The coil CL2 of the upper layer is connected to a padregion PD2 of the chip CH1 through a wire W. The coil CL1 of the lowerlayer is connected to a peripheral circuit PC through a wiring notillustrated. On the peripheral circuit PC, a logic circuit or the likeconstituted by elements such as MISFETs is formed. The peripheralcircuit PC is connected to a pad region PD2 disposed on an end portionof the chip CH2 through a wiring, not illustrated. The pad region PD2 isconnected to a high voltage region HC having a circuit that can bedriven at a high voltage (for example, AC actual value, 100 Vrms ormore) through a wire W and a lead or the like, not illustrated.

For example, a transmission circuit in the peripheral circuit PC of thechip CH1 allows a pulse-state electric current to flow through the coilCL1. At this time, the direction of the current flowing through the coilCL1 is changed depending on ‘1’ or ‘0’ of the electric signal(transmitting signal, data). By the electric current of the coil CL1, aninduction voltage is generated in the coil CL2 of the upper layer. Thisvoltage is transmitted to the chip CH2 through the wire W, and amplifiedin a receiving circuit in the peripheral circuit PC of the chip CH2, andis further latched. In this manner, the electric signal can bewirelessly transmitted by using a magnetic induction coupling. In otherwords, by connecting the low voltage region LC and the high voltageregion HC, which are electrically insulated from each other, to eachother through a transformer, an electric signal can be transmittedbetween these regions (LC and HC).

Moreover, by utilizing a fine machining process for forming asemiconductor device, coils (CL1, CL2) that constitute a transformer areformed in the same manner as in the wirings and the like so that theperipheral circuit PC and the coils (CL1, CL2) can be integrally formedon the same chip.

As a shape of the conductor pattern forming the transformer, as shown inFIG. 1, a spiral-shaped conductor pattern may be used (see FIG. 3).

FIG. 2 is a cross-sectional view illustrating a configuration of asemiconductor device of the present embodiment. The semiconductor deviceas shown in FIG. 2 is a semiconductor device provided with atransformer, which corresponds to, for example, a cross section takenalong an A-A line in FIG. 1.

The semiconductor device of the present embodiment is formed by using anSOI (Silicon on Insulator) substrate. The SOI substrate is formed into awafer state having a substantially round shape in the manufacturingprocess of the semiconductor device, and provided with a plurality ofchip regions, each having a substantially rectangular shape. Each of thechip regions is provided with a transformer formation region 1Acorresponding to a region in which a transformer is formed, a peripheralcircuit formation region 1B corresponding to a region in which aperipheral circuit is formed, and a seal ring formation region ICcorresponding to a region in which a seal ring is formed. Moreover, theperipheral circuit formation region 1B is provided with an elementformation region BE on which elements, such as MISFETs, are mainlyformed and a pad formation region BP on which a pad region PD2 isformed. The seal ring refers to a shielding wall against moisture or thelike, which is formed so as to surround the transformer formation region1A and the peripheral circuit formation region 1B (see FIG. 4).Moreover, the seal ring also has a function of preventing a crack frombeing transferred at the time of dicing. In this case, as will bedescribed later, it is composed of a stacked layer portion, such as asurrounding wiring, a surrounding plug, or the like, formed in a mannerso as to surround the transformer formation region 1A and the peripheralcircuit formation region 1B.

The SOI substrate S is provided with a support substrate Sa, aninsulating layer (insulating film, buried insulating film, or BOX) Sbformed on the support substrate Sa, and a semiconductor layer (forexample, silicon layer Sc) formed on the insulating layer Sb.

In the element formation region BE of the peripheral circuit formationregion 1B, semiconductor elements, such as MISFETs (Metal InsulatorSemiconductor Field Effect Transistors) or the like, are formed. TheseMISFETs constitute, for example, the peripheral circuit PC shown inFIG. 1. Additionally, in this case, the MISFETs are exemplified as thesemiconductor elements; however, in addition to these, capacitors,memory elements or transistors having other configurations, or the like,may be formed in the peripheral circuit formation region 1B.

Moreover, on the MISFET (NT, PT), an interlayer insulator IL1 is formed,and on this interlayer insulator IL1, a wiring M1 is formed. The MISFET(NT, PT) and the wiring M1 are connected to each other through a plugP1. Furthermore, on the wiring M1, an interlayer insulator IL2 isformed, and on the interlayer insulator IL2, a wiring M2 is formed. Thewiring M1 and the wiring M2 are connected to each other through a plugP2 formed in the interlayer insulator IL2. On the wiring M2, aninterlayer insulator IL3 is formed, and on the interlayer insulator IL3,a wiring M3 is formed. The wiring M2 and the wiring M3 are connected toeach other through a plug P3 formed in the interlayer insulator IL3. Inthis case, the film thickness of the wiring M3 is made larger andcomparatively thicker (for example, with a film thickness of 3 μm ormore) than the film thickness of the wiring M2.

On the wiring M3, an interlayer insulator IL4 is formed, and on theinterlayer insulator IL4, a wiring M4 is formed. The interlayerinsulator IL4 is formed so as to be comparatively thick in order tomaintain withstand voltage between the coils CL1 and CL2, which will bedescribed later. For example, between the coils CL1 and CL2, a withstandvoltage of 2.5 kVrms for 60 seconds is required. Moreover, theinterlayer insulator IL4 is formed of an inorganic insulating filmformed of a silicon oxide film, a silicon nitride film, or the like. Forexample, the interlayer insulator IL4 is composed of an HDP (highdensity plasma) film IL4 a and a stacked film of P-TEOS films IL4 b andIL4 c. The HDP film is a film formed by a high density plasma CVDmethod, and the P-TEOS film IL4 b is a film formed by a general plasmaCVD method with TEOS (tetraethyl orthosilicate) being used as a sourcegas. By using the HDP film IL4 a, gaps between the wirings M3 can beburied with high precision. Moreover, as will be described later indetail, the HDP film IL4 a has such a tendency as to be film-formed in adivided manner on the gaps between the wirings M3 as well as on thewirings M3. For this reason, the film is hardly formed on the cornerportion of each wiring M3, and is mainly formed on the gaps between thewirings M3 as well as on the wirings M3 (see FIG. 20). For this reason,in comparison with a case in which the P-TEOS film is formed on thewirings M3, in the case when the HDP film IL4 a is formed on the wiringsM3, the film is divided so as to mitigate the film stress. Moreover,since a configuration in which a wiring M4 to be described later and thewiring M3 are connected on the bottom face of an opening portion OA1 isprovided, the interlayer insulator IL4 can be divided by the openingportion OA1 formed with a comparatively large area. With thisarrangement, the film stress can be mitigated. The plane shape of theopening portion OA1 is formed, for example, as a substantiallyrectangular shape of 20 μm×20 μm. Furthermore, by enlarging the wirewidth of the wiring M4 and wiring M3, as well as by stacking these withthe bottom face of the opening portion OA1 being interposedtherebetween, the wiring resistances of the wiring M4 and the wiring M3can be reduced. For example, each of the wire Widths of the wiring M4and wiring M3 is made larger than the wire Width of the wiring M2, andthe wire Width of the wiring M4 is, for example, about 4 μm, and thewire Width of the wiring M3 is about 4 μm. However, in the wiring M4 andthe wiring M3, the width of the formation region of each of the openings(OA1, OA2) is set to, for example, 40 μm or more. Moreover, by formingthese wrings as Al wirings, that is, by forming these by using amaterial containing aluminum, it is possible to form these at low costs,by using a simple process, in comparison with the case of using, forexample, a copper material.

The wiring M4 is a wiring for use in drawing a region PD1 that is oneportion of the wiring M3 to a desired region (pad region PD2) of thechip. That is, the above-mentioned region (region on which the padregion PD2 is formed) corresponds to a pad formation region BP. The filmthickness of the wiring M4 is formed so as to be comparatively large(for example, with a film thickness of 3 μm or more), that is, largerthan the film thickness of the wiring M2.

On the wiring M4, a stacked film of, for example, a silicon nitride filmPROa and a polyimide film PROb, is formed as a protective film PRO. Onthe protective film PRO, an opening portion OA2 is formed so that thewiring M4 forms an exposed portion. The exposed portion of the wiring M4forms the pad region PD2.

On the transformer formation region 1A, a transformer having the coilCL1 and the coil CL2 is formed. The coil CL1 of the lower layer isformed as the same layer as the wiring M2.

The coil CL2 of the upper layer is formed as the same layer as thewiring M4. Between the coil CL1 and the coil CL2, the interlayerinsulator IL4 and the interlayer insulator IL3 are formed. Each of theinterlayer insulator IL4 and the interlayer insulator IL3 are formed ofan inorganic insulating film, such as silicon oxide films, siliconnitride films, or the like. Moreover, the interlayer insulator IL4 isformed so as to be comparatively thick in order to ensure a properwithstand voltage between the coils CL1 and CL2. The interlayerinsulator IL4 is made thicker than the interlayer insulator IL2.Additionally, the interlayer insulator IL3 and the interlayer insulatorIL2 have film thicknesses in the similar level. For example, the filmthickness of the interlayer insulator IL4 is about 8 μm, and the filmthickness of the interlayer insulator IL3 is about 1.5 μm. Moreover, asum of the film thicknesses of the interlayer insulator IL4 and theinterlayer insulator 1L3 located between the coil CL1 and the coil CL2is preferably set to 5 μm or more.

FIG. 3 is a plan view illustrating an example of a configuration of acoil of the semiconductor device of the present embodiment. The coilshown in FIG. 3 corresponds to, for example, the coil CL2 of the upperlayer. In FIG. 3, the coil CL2 is formed of a conductive film having aspiral shape when seen in the plan view from the upper surface, and theend portion inside the spiral-shaped conductive film is connected to thepad region PD2, while the end portion outside the spiral-shapedconductive film is connected to another pad region PD2. Each of the padregions PD2 is connected to, for example, a receiving circuit (Rx) ofanother chip through a wire (W) or the like (see FIG. 29, FIG. 30 andthe like).

In the same manner as in the coil CL1 on the upper layer, the coil CL1of the lower layer is formed of a conductive film having a spiral shape.For example, it is formed into a spiral shape as shown in FIG. 3 whenseen in the plan view from the upper surface. In the coil CL1 of thelower layer, the end portion (pad region) of the spiral-shapedconductive film is connected to a transmission circuit (Tx), with thesame layer as the coil CL1 or the wiring on the lower layer (forexample, the wiring M2, wiring M1) being interposed therebetween (seeFIG. 29, FIG. 30, or the like). For example, the end portion inside thespiral-shaped conductive film forming the coil CL1 is connected to anMISFET forming the transmission circuit (Tx), with the wiring (forexample, the wiring M1) on the lower layer of the coil CL1 beinginterposed therebetween, and the end portion outside thereof isconnected to the MISFET forming the transmission circuit (Tx), with thewiring (for example, the wiring M2) formed as the same layer as the coilCL1 being interposed therebetween.

Additionally, in the transformer formation region 1A, it is preferablenot to form elements such as MISFETs or the like forming the peripheralcircuit PC. In the transformer formation region 1A, the pad region PD2of the coil CL2 of the upper layer to be formed on the upper portionthereof is connected (bonded) to another chip through the wire W or thelike. In order to avoid an influence to the elements due to a pressingpressure at the time of the bonding, it is preferable not to form theelements on the transformer formation region 1A. Moreover, for the samereason, it is also preferable not to form elements on the pad formationregion BP. Moreover, in the transformer formation region 1A, it ispreferable not to form elements thereon, also for the purpose ofpreventing a mutual interference of an electric signal between coils andan electric signal to be applied to the elements.

On the semiconductor layer (silicon layer Sc) of the seal ring formationregion 1C, a p-type semiconductor region PL is formed, and on thisp-type semiconductor region PL, the plural wirings M1 to M4 are formed(see FIG. 2). Moreover, the p-type semiconductor region PL and thewiring M1 are connected to each other through the plug P1 formed in theinterlayer insulator ILL Furthermore, the wiring M1 and the wiring M2are connected to each other through the plug P2 formed in the interlayerinsulator I2. Moreover, the wiring M2 and the wiring M3 are connected toeach other through the plug P3 formed in the interlayer insulator IL3.Furthermore, the wiring M3 and the wiring M4 are connected to each otherthrough the bottom face of the opening portion OA1. The wiring M4 of theseal ring formation region 1C is formed as the same layer as the wiringM4 of the peripheral circuit formation region 1B and the coil CL2 of theupper layer. The width of the wiring M4 is set to, for example, about2.8 μm.

FIG. 4 is a plan view illustrating an example of a configuration of thesemiconductor device of the present embodiment. As shown in FIG. 4, theseal ring formation region 1C is disposed along the outer periphery ofthe semiconductor device having a substantially rectangular shape. Inother words, the sealing ring formation region 1C is disposed so as tosurround the transformer formation region 1A and the peripheral circuitformation region 1B. Inside this sealing ring formation region 1C, thecoil CL2 and the plural pad regions PD2 are disposed. Moreover, on theouter periphery of the coil CL2, a plurality of circuit blocks (notillustrated) forming the peripheral circuit PC are disposed.

Therefore, the wirings M1 to M4 and plugs P1 to P3 formed in the sealring formation region 1C are disposed so as to surround the transformerformation region 1A and the peripheral circuit formation region 1B. Inother words, the wirings M1 to M4 formed in the seal ring formationregion 1C are surrounding wirings, and the plugs P1 to P3 aresurrounding plugs. The surrounding wirings are wirings that are formed,for example, along the seal ring formation region 1C into a shape forsurrounding the transformer formation region 1A and the peripheralcircuit formation region 1B. The surrounding plugs are conductive filmsburied into contact holes that are formed, for example, into a shapesurrounding the transformer formation region 1A and the peripheralcircuit formation region 1B, along the seal ring formation region 1C. Bystacking these surrounding wirings and surrounding plugs over aplurality of layers, a shielding wall can be formed.

In this manner, by arranging the seal ring formation region 1C with thewirings (M1 to M4) and plugs (P1 to P3) of the plurality of layersformed thereon along the outer periphery of the semiconductor device(chip region), it is possible to prevent moisture from invading thereinfrom the periphery of the semiconductor device, and consequently toimprove the moisture resistance of the semiconductor device. Moreover,by the seal ring formation region 1C, the interlayer insulators (IL1 toIL4) are divided into a lattice shape for each of the chip regions ofthe SOI substrate S (semiconductor wafer). It is possible to mitigate afilm stress applied onto the SOI substrate S in a wafer state. Thus, itis possible to reduce the warping of the SOI substrate, and also toavoid insufficient exposure, transporting failure, and so forth thereof.

In particular, in the case when in order to ensure withstand voltagebetween the coils CL1 and CL2, thick interlayer insulators IL4 and IL3are formed between them, the film stress tends to become greater. Evenin this case, by forming the seal ring formation region 1C, theinterlayer insulators IL4 and IL3 can be divided, thereby making itpossible to mitigate the film stress. Moreover, in the seal ringformation region 1C, such a configuration as to connect the wiring M3and the wiring M4 on the bottom face of the opening portion OA isprepared; therefore, the interlayer insulator IL4 is divided by theopening portion OA formed so as to have a comparatively large area. Bythis configuration also, the film stress can be mitigated. The openingportion OA can be formed into a stripe shape with a width of, forexample, 8 μm.

Moreover, in the seal ring formation region 1C, only the silicon nitridefilm PROa is formed, with the polyimide film PROb being removed. In thismanner, by removing the polyimide film PROb on the seal ring formationregion 1C located on the outer periphery of the semiconductor device(chip region), it becomes possible to prevent the polyimide film PRObfrom being peeled off at the time of cutting (dicing) the substrate,which will be described later, and also to prevent the polyimide filmPROb from wrapping around a dicer.

FIG. 5 is a cross-sectional view illustrating a configuration in thevicinity of the coil CL2 of the upper layer, and FIG. 6 is a plan viewillustrating the configuration in the vicinity of the coil CL2 of theupper layer. As shown in FIG. 5, a distance DM4 between the coil CL2 ofthe upper layer and the wiring M4 is longer than a distance DM3 betweenthe coil CL2 of the upper layer and the wiring M3 (DM4>DM3). Moreover, adistance DM3 from the wiring M3 is made longer than a distance betweenthe coil CL2 of the upper layer and the coil CL1 of the lower layer (sumof the film thicknesses of the interlayer insulators IL3 and IL4, forexample, about 5 μm). The distance DM4 and the distance DM3 are planardistances, that is, the shortest distances on the plan view.

A line L1 shown in FIG. 6 forms a frame indicating a space between thecoil CL2 of the upper layer and the wiring M4. A line L2 forms a frameindicating a space between the coil CL2 of the upper layer and thewiring M3. In other words, the wiring M4 is disposed outside (region onthe side opposite to the coil CL2 side) the line L1, and the wiring M3is disposed outside the line L1.

In this manner, the distance DM4 between the coil CL2 of the upper layerand the wiring M4 is made longer than the distance DM3 between the coilCL2 and the wiring M3, and the distance M3 between the coil CL2 of theupper layer and the wiring M3 is made longer than the distance betweenthe coil CL2 of the upper layer and the coil CL1 of the lower layer (thesum of the film thicknesses of the interlayer insulators IL3 and IL4).With this configuration, it is possible to improve the insulationwithstand voltage between the coil CL2 and the wiring M4 as well asbetween the coil CL2 and the wiring M3, which tend to cause a highvoltage difference.

Moreover, in the present embodiment, such a configuration is prepared inwhich the transformer formation region 1A, the element formation regionBE and the pad formation region BP are respectively surrounded by a deeptrench isolation film DTI penetrating the silicon layer Sc (see FIG. 2);therefore, it is possible to suppress variations in the electricpotential of the p-type well PW of the transformer formation region 1A.As a result, it is possible to reduce variations in the capacity betweenthe coil CL1 of the lower layer and the p-type well PW, and consequentlyto improve the transmission precision of an electric signal between thecoils, thereby stabilizing the operations.

[Explanation of Manufacturing Method]

Next, referring to FIG. 7 to FIG. 28, the following description willexplain the manufacturing method for a semiconductor device of thepresent embodiment, and further clarify the configuration of thesemiconductor device. FIG. 7 to FIG. 28 are cross-sectional viewsshowing manufacturing processes of the semiconductor device of thepresent embodiment.

As shown in FIG. 7, for example, an SOI substrate S is prepared as asemiconductor substrate. The SOI substrate S is constituted by a supportsubstrate Sa composed of a single crystal silicon substrate(semiconductor film), an insulating layer (buried insulating layer, BOX)Sb formed on the support substrate Sa and a silicon layer (semiconductorlayer, semiconductor film, thin-film semiconductor film, thin-filmsemiconductor region) Sc formed on the insulating layer Sb.

The SOI substrate S is provided with a transformer formation region 1Athat is a region in which a transformer is formed, a peripheral circuitformation region 1B that is a region in which a peripheral circuit isformed, and a seal ring formation region 1C that is a region in which aseal ring is formed. Moreover, the peripheral circuit formation region1B is provided with an element formation region BE in which elementssuch as MISFETs or the like are mainly formed, and a pad formationregion BP in which a pad region is formed.

Next, as shown in FIG. 8, on the main surface of the SOI substrate S, adevice isolation region ST is formed. The device isolation region ST isformed by using, for example, an LOCOS (Local Oxidation of Silicon)method. For example, a mask film (for example, silicon nitride film)having an opening corresponding to the device isolation region is formedon the SOI substrate S, and by carrying out a heating treatment thereon,the device isolation region ST formed of a silicon oxide film is formed.Next, the above-mentioned mask film (not illustrated) is removed.

Next, as shown in FIG. 9, in the device isolation region, a deep groove(deep trench) DT that further reaches the insulating layer Sb is formed,and by burying an insulating film inside thereof, a deep trenchisolation film DTI is formed. For example, a photoresist film (notillustrated) having an opening in the region used for forming the grooveDT is formed on the device isolation region ST and the silicon layer S,and by using this photoresist film as a mask, the device isolationregion ST and the silicon layer Sc on the lower layer thereof areremoved by using a dry etching process. Thus, the groove DT thatpenetrates the device isolation region ST and the silicon layer Sc toreach the insulating layer Sb can be formed. Next, the above-mentionedphotoresist film (not illustrated) is removed.

Next, on the groove DT, the device isolation region ST and the siliconlayer Sc, for example, a silicon oxide film is deposited as aninsulating film, by using a CVD (Chemical Vapor Deposition) method orthe like. Thus, the inside of the groove DT is buried with the siliconoxide film. Next, the above-mentioned silicon oxide film is polished bya CMP (Chemical Mechanical Polishing) method or the like, until thedevice isolation region ST is exposed. Thus, the deep trench isolationfilm DTI in which an insulating film such as a silicon oxide film or thelike is buried is formed inside the groove DT.

The deep trench isolation film DTI is formed in a manner so as torespectively surround the transformer formation region 1A, the elementformation region BE and the pad formation region BP (see FIG. 2).

Next, as shown in FIG. 10, elements, such as MISFETs or the like, areformed on the peripheral circuit formation region 1B. The followingdescription will explain formation processes of the MISFETs (NT, PT).Although not particularly limited in the formation method of theMISFETs, they can be formed by using the following processes.

First, a p-type well PW and an n-type well NW are formed in the siliconlayer Sc of the SOI substrate S. In this case, the p-type well PW andthe n-type well NW are formed in the element formation region BE of theperipheral circuit formation region 1B, and the p-type well PW is formedon the pad formation region BP. On the p-type well PW on the elementformation region BE, the MISFET (NT) is formed, and on the n-type wellNW of the element formation region BP, the MISFET (PT) is formed.Moreover, the p-type well PW is formed on the transformer formationregion 1A and the seal ring formation region 1C.

The p-type well PW and the n-type well NW are respectively formed by ionimplantation, and are also formed until a predetermined depth from themain surface of the silicon layer Sc of the SOI substrate S.

Next, on the main surface of the SOI substrate S, a gate electrode GE isformed with the gate insulating film GI interposed therebetween. Forexample, by carrying out a thermal oxidizing process on the surface ofthe silicon layer Sc, the gate insulating film GI formed of the siliconoxide film is formed. As the gate insulating film GI, in addition to thesilicon oxide film, a silicon oxynitride film may be used. Moreover, ahigh dielectric constant film (so-called high-k film) may be used as thegate insulating film GI. Moreover, in addition to the thermal oxidizingmethod, by using another film-forming method such as a CVD method or thelike, the gate insulating film GI may be formed.

Next, on the gate insulating film GI, for example, a polycrystal siliconfilm is formed by using a CVD method or the like, and by patterning thepolycrystal silicon film by the use of a photolithography technique andan etching technique, the gate electrode GE is formed. Additionally, inaccordance with the characteristics of each of the MISFETs (NT, PT), animpurity may be implanted into the material in this case, thepolycrystal silicon film) forming the gate electrode GE.

Next, a source-drain region SD is formed in the silicon layer Sc on eachof the both sides of the gate electrode GE.

First, by ion-implanting an n-type impurity to a p-type well PW of eachof both sides of the gate electrode GE, an n⁺-type semiconductor region(source-drain region) SD is formed. Moreover, by ion-implanting a p-typeimpurity to the n-type well NW of each of the both sides of the gateelectrode GE, a p⁺-type semiconductor region (source-drain region) SD isformed. At this time, in the p-type well PW of the seal ring formationregion 1C, a p⁺-type semiconductor region PL is formed. Additionally,the source-drain region SD may be formed into a source-drain region ofan LDD structure. The source-drain region of the LDD structure iscomposed of a low-concentration impurity region and a high-concentrationimpurity region. For example, after ion-implanting an impurity to a wellof each of the both sides of the gate electrode GE to form alow-concentration impurity region on each of the side walls of the gateelectrode GE, a side wall film is formed on each of the side walls ofthe gate electrode GE, and in each of the wells on the both sides of acomposite body of the gate electrode GE and the side wall film, ahigh-concentration impurity region is formed.

Next, an annealing treatment (heating treatment) for activatingimpurities that have been hitherto ion-implanted is carried out.

In this manner, MISFETs (NT, PT) can be formed in the peripheral circuitformation region 1B. Thereafter, if necessary, a metal silicide layer(not illustrated) may be formed on the gate electrode GE and thesource-drain region SD by using a Salicide (Self Aligned Silicide)technique.

Next, as shown in FIG. 11, an interlayer insulator IL1 is formed on themain surface (the entire main surface) of the SOI substrate S. Theinterlayer insulator IL1 is formed so as to cover the MISFETs (NT, PT)formed on the SOI substrate S. For example, after depositing the siliconoxide film by using a CVD method, the surface of the interlayerinsulator IL1 is flattened by using a CMP method or the like, ifnecessary.

Next, as shown in FIG. 12, the plug P1 is formed in the interlayerinsulator IL1. For example, by using a photoresist layer (notillustrated) formed on the interlayer insulator IL1 by aphotolithography technique as an etching mask, the interlayer insulatorIL1 is dry-etched so that a contact hole (through hole, hole) is formedon the interlayer insulator ILL Next, by burying a conductor film intothe contact hole, a conductive plug (connecting conductor portion) P1 isformed. For example, a stacked film of a titanium film and a titaniumnitride film is deposited by using a sputtering method or the like onthe interlayer insulator IL1 including the inside of the contact hole asa barrier film. Next, on the barrier film, a tungsten (W) film isdeposited by using a CVD method or the like as the main conductive film,with such a film thickness as to fill in the contact hole. Next, byusing a CMP method or the like, unnecessary burrier film and mainconductive film on the interlayer insulator IL1 are removed. Thus, theplug P1 is formed. For example, the plug P1 is formed on thesource-drain region SD and the p⁺-type semiconductor region PL of theseal ring formation region 1C. Additionally, the plug P1 may be formedon the gate electrode GE.

Next, as shown in FIG. 13, on the plug P1, a wiring M1 made of aconductive film is formed. For example, on the interlayer insulator IL1and the plug P1, an aluminum film and a stacked film composed of atitanium/titanium nitride film are successively deposited as aconductive film, by using a sputtering method or the like. The stackedfilm of the titanium/titanium nitride film is also referred to as abarrier conductor film. Next, by patterning the above-mentioned stackedfilm by the use of a photolithography technique and an etchingtechnique, the wiring M1 is formed on the plug P1.

The above-mentioned aluminum film for use in forming the wiring M1 isnot particularly limited by a pure aluminum film, and may be formed byusing a conductive material film (in this case, however, a conductivematerial film exerting a metallic conductivity) mainly composed ofaluminum. For example, a compound film or an alloy film of Al (aluminum)and Si (silicon) may be used. Moreover, the compounding ratio of Al(aluminum) in the aluminum film is preferably set to be greater than 50atomic % (that is, Al rich). The same goes not only for theabove-mentioned aluminum film for use in forming the wiring M1, but alsofor aluminum films for use in forming the wiring M2, wiring M3 andwiring M4.

In this case, the wiring M1 is formed on the element formation region BEand the seal ring formation region 1C; however, this may be formed inthe other regions. For example, the wiring M1 may be formed on thetransformer formation region 1A. The wiring M1 formed on the transformerformation region 1A in this manner serves as a wiring that electricallyconnects, for example, the coil CL1 and the peripheral circuit to eachother.

Next, as shown in FIG. 14, the interlayer insulator IL2 is formed on thewiring M1. For example, a silicon oxide film is deposited on the wiringM1 by using a CVD method or the like.

Next, as shown in FIG. 15, by patterning the interlayer insulator IL2, acontact hole is formed on the wiring M1, and by further burying aconductive film inside the contact hole, a plug P2 is formed in theinterlayer insulator IL2. The plug P2 can be formed in the same manneras in the plug P1.

Next, as shown in FIG. 16, on the plug P2, a wiring M2 composed of aconductive film is formed. For example, on the interlayer insulator IL2and the plug P2, an aluminum film and a stacked film composed of atitanium/titanium nitride film are successively deposited as aconductive film, by using a sputtering method or the like. Next, bypatterning the above-mentioned stacked film by the use of aphotolithography technique and an etching technique, the wiring M2 isformed on the plug P2.

In this case, in the transformer formation region 1A, the coil CL1 ofthe lower layer is formed as the same layer as the wiring M2. That is,upon patterning the stacked film, in the transformer formation region1A, the aforementioned spiral-shaped conductive film (coil CL1) isformed (see FIG. 3).

Of course, in the transformer formation region 1A, in addition to thecoil CL1, the wiring M2 (for example, a wiring that electricallyconnects the coil CL1 of the lower layer to the peripheral circuit) maybe formed.

Next, as shown in FIG. 17, on the wiring M2, an interlayer insulatingfilm IL3 is formed. For example, on the wiring M2, a silicon oxide filmis deposited by using a CVD method or the like.

Next, as shown in FIG. 18, by patterning the interlayer insulator IL2, acontact hole is formed on the wiring M2, and by further burying aconductive film inside the contact hole, a plug P3 is formed in theinterlayer insulator IL3. The plug P3 can be formed in the same manneras in the plug P1.

Next, as shown in FIG. 19, on the plug P3, a wiring M3 composed of aconductive film is formed. For example, on the interlayer insulator IL3and the plug P3, an aluminum film and a stacked film composed of atitanium/titanium nitride film are successively deposited as aconductive film, by using a sputtering method or the like. Next, bypatterning the above-mentioned stacked film by the use of aphotolithography technique and an etching technique, the wiring M3 isformed on the plug P3. The film thickness of the wiring M3 is greaterthan the film thickness (for example, 0.4 to 1.0 μm) of the wiring M1,M2, and is set to about 3 to 4 μm. In this case, in the seal ringformation region 1C, the wiring M3 is formed as a surrounding wiring.

Next, as shown in FIG. 20 to FIG. 24, an interlayer insulator IL4 isformed on the wiring M3. The interlayer insulator IL4 is formed of astacked film of an HDP film IL4 a and P-TEOS films IL4 b, IL4 c.

In this case, in accordance with the kind of energy required forreaction of a source gas, the CVD method is classified into a thermalCVD, a plasma CVD or the like. Moreover, the plasma CVD method isclassified into a general-use plasma CVD in which a discharge derivedfrom a high frequency of industrial frequency (13.56 MHz) is used, and ahigh density plasma CVD in which the plasma density is increased incomparison with that of this plasma CVD. Therefore, the HDP film is afilm formed by using the high density plasma CVD, and the P-TEOS film isa film formed by using the general-use plasma CVD, with TEOS being usedas a source gas.

First, as shown in FIG. 20, on the wiring M3 and the interlayerinsulator IL4, a silicon oxide film is formed as the HDP film IL4 a byusing the high density plasma CVD method. By using the high densityplasma CVD method, the gap between the wirings M3 can be buried with theHDP film IL4 a, with high precision and a good flatness, even in thecase when the film thickness of the wiring M3 is comparatively high andthe step difference (aspect ratio) between the wiring M3 and theinterlayer insulator IL4 is large. In particular, in the case when thehigh density plasma CVD method is used, as described earlier, the filmis mainly formed on the gap between the wirings M3 as well as on thewiring M3.

Next, as shown in FIG. 21, the P-TEOS film IL4 b is formed on the HDPfilm IL4 a. That is, by using a plasma CVD using TEOS as a source gas,the P-TEOS film (silicon oxide film) IL4 b is deposited on the HDP filmIL4 a.

Thereafter, a flattening process is carried out on the surface of theP-TEOS film IL4 b by using a CMP method or the like, and in this case,the HDP film IL4 a and the P-TEOS film IL4 b on the wiring M3 having aplanarly large size (having a wide width) are preliminarily removed byusing a dry etching process. In this case, as shown in FIG. 22, the HDPfilm IL4 a and the P-TEOS film IL4 b on the wiring M3 of the padformation region BP as well as on the wiring M3 of the seal ringformation region 1C are removed by dry etching so that an openingportion OA3 is formed.

Next, as shown in FIG. 23, the surfaces of the HDP film IL4 a and theP-TEOS film IL4 b are flattened by using a CMP method or the like. Then,as shown in FIG. 24, a P-TEOS film IL4 c is formed on the HDP film IL4 aand the P-TEOS film IL4 b. That is, by using plasma CVD with TEOS beingused as a source gas, the P-TEOS film IL4 c is deposited on the HDP filmIL4 a and the P-TEOS film IL4 b. Thus, on the wiring M3, an interlayerinsulator IL4 composed of the HDP film IL4 a and the stacked film of theP-TEOS films IL4 b, IL4 c is formed. The film thickness of theinterlayer insulator IL4 is about 8 μm, and preferably set to 4 μm ormore.

Next, as shown in FIG. 25, by removing the interlayer insulator IL4 fromthe wiring M3 of the pad formation region BP and the wiring M3 of theseal ring formation region 1C, openings OA1 and OA are formed. Forexample, a photoresist film having openings on the formation regions ofthe openings OA1 and OA is formed on the interlayer insulator IL4, andby etching the interlayer insulator IL4, with the photoresist film beingused as a mask, the openings OA1 and OA are formed. The wiring M3 isexposed to the bottom surface of the opening portion OA1 of the padformation region BP.

Next, as shown in FIG. 26, a wiring M4 is formed on the interlayerinsulator IL4 including the insides of the openings OA1 and OA. Forexample, on the interlayer insulator IL4 including the insides of theopenings OA1 and OA, a stacked film composed of an aluminum film and atitanium/titanium nitride film is successively deposited as a conductivefilm by using a sputtering method or the like. Next, by patterning thestacked film by the use of a photolithography technique and an etchingtechnique, the wiring M4 is formed. The film thickness of the wiring M4is about 3 to 4 μm.

In this case, in the transformer formation region 1A, the coil CL2 ofthe upper layer is formed as the same layer as the wiring M4. That is,upon patterning the above-mentioned stacked film, in the transformerformation region 1A, the aforementioned spiral-shaped conductive film(coil CL2) is formed (see FIG. 3). Moreover, in the present embodiment,as described earlier, the wiring M4 prepared as the same layer as thewiring M4 in the peripheral circuit formation region 1B is formed as asurrounding wiring on the wiring M3 in the seal ring formation region1C.

Next, as shown in FIG. 27 and FIG. 28, an insulating film is formed onthe coil CL2 and the wiring M4 as a protective film PRO. In this case,as the insulating film, for example, a stacked film composed of asilicon nitride film PROa and a polyimide film PROb is formed. First, asshown in FIG. 27, the silicon nitride film PROa is deposited on the coilCL2 and the wiring M4 by using a CVD method or the like. Next, as shownin FIG. 28, by using a photoresist film, not illustrated, on the siliconnitride film PROa as a mask, the silicon nitride film PROa on the padregion PD2 of the wiring M4 is etched and removed so that the wiring M4on the pad region PD2 is exposed.

Next, on the pad region PD2 and the silicon nitride film PROa, aphotosensitive polyimide film PROb is applied. For example, after aprecursor liquid of polyimide has been rotated and applied onto thesurface of the SOI substrate S, this is dried so that the polyimide filmPROb is formed. Next, by exposing and developing the photosensitivepolyimide film PROb, the polyimide film PROb on the pad region PD2 isremoved so that an opening portion OA2 is formed (see FIG. 2). At thistime, the polyimide film PROb on the upper portion of the wiring M3 inthe seal ring formation region 1C is also removed. Thereafter, bycarrying out a heating treatment thereon, the polyimide film PROb iscured.

Thereafter, by cutting (dicing) the wafer-state SOI substrate S for eachof the chip region, it is divided (into individual pieces) into aplurality of semiconductor chips. Thus, a semiconductor chip is obtainedby each of the chip regions of the SOI substrate S (semiconductorwafer). Additionally, prior to the dicing process, the rear surface ofthe SOI substrate S may be polished to form the SOI substrate S into athin film.

Next, by connecting the pad region PD2 of the cut-out semiconductor chipto a pad region of another semiconductor chip by using a wire or thelike, a semiconductor device with two semiconductor chips beingelectrically connected is formed (see FIG. 1).

Second Embodiment

In the present embodiment, an explanation will be given to an appliedportion of the semiconductor device explained in the first embodiment.FIG. 29 is a block diagram illustrating a configuration of asemiconductor device in accordance with the present embodiment. FIG. 30is a plan view illustrating the configuration of the semiconductordevice of the present embodiment.

In the semiconductor device shown in FIG. 29, the chip CH1 and chip CH2are formed into one package.

The chip CH1 is provided with a transformer composed of a coil CL1connected to a transmission circuit Tx and a coil CL2. The coil CL2 isconnected to a receiving circuit Rx of the chip CH2 with pad regions PD2and wires W interposed therebetween. Additionally, in FIG. 29 and FIG.30, the pad regions PD2 are indicated by square portions.

Moreover, the chip CH1 is provided with the receiving circuit Rx and alogic circuit Logic. The logic circuit Logic is connected to thetransmission circuit Tx and the receiving circuit Rx of the chip CH1,and the logic circuit Logic is connected to the plural pad regions PD2.

The chip CH2 is provided with a transformer composed of a coil CL4connected to a transmission circuit Tx and a coil CL3. The coil CL3 isconnected to a receiving circuit Rx of the chip CH1 with pad regions PD2and wires W interposed therebetween.

Moreover, the chip CH2 is provided with the receiving circuit Rx and alogic circuit Logic. The logic circuit Logic is connected to thetransmission circuit Tx and the receiving circuit Rx of the chip CH2,and the logic circuit Logic is connected to the plural pad regions PD2.

As shown in FIG. 30, the coil CL2 of the chip CH1 is connected to thereceiving circuit Rx of the chip CH2 through wires W. On the lower layerof the coil CL2, a coil (CL1), not illustrated, is disposed, andconnected to the transmission circuit Tx of the chip CH1 through wires,not illustrated.

Moreover, the coil CL3 of the chip CH2 is connected to the receivingcircuit Rx of the chip CH1. On the lower layer of the coil CL3, a coil(CL4), not illustrated, is disposed, and connected to the transmissioncircuit Tx of the chip CH2 through wires, not illustrated.

For example, the logic circuit Logic is disposed on the chip CH2. In thechip CH2, a peripheral circuit composed of the logic circuit Logic, thetransmission circuit Tx, the receiving circuit Rx and the like isconnected to the plural pad regions PD2 through wires, not illustrated.Moreover, in the chip CH1, a peripheral circuit composed of the logiccircuit Logic, the transmission circuit Tx, the receiving circuit Rx andthe like is connected to the plural pad regions PD2 through wires, notillustrated.

The pad regions PD2 of the chips CH1 and CH2 are connected to leads RDthrough wires W.

In this semiconductor device, the configuration (see FIG. 2, etc.) ofthe first embodiment can be applied to the peripheral circuit portioncomposed of the logic circuit Logic, the transmission circuit Tx, thereceiving circuit Rx and the like of the chip CH2 and the transformer(coils CL1 and CL2) portion.

Moreover, the configuration (see FIG. 2, etc.) of the first embodimentcan be applied to the peripheral circuit portion composed of the logiccircuit Logic, the transmission circuit Tx, the receiving circuit Rx andthe like of the chip CH1 and transformer (coils CL3 and CL4) portion.

Third Embodiment

In the present embodiment, explanations will be given to variousapplication examples of the first embodiment.

First Application Example

In the first embodiment, the coil CL2 (single coil, see FIG. 3) having astring of coil portions wound clockwise substantially centered on thepad region PD2 has been exemplified; however, the shape of the coil CL2is not particularly limited, and coils having various shapes may beused.

FIG. 31 is a plan view illustrating a configuration of a coil inaccordance with a first application example of the present embodiment.The coil CL2 shown in FIG. 31 has two coil portions. That is, a stringof coil portion wound clockwise substantially centered on the first padregion PD2 and a string of coil portion wound counter-clockwisesubstantially centered on the second pad region PD2 are prepared, andend portions on the outside of the two coil portions are respectivelyconnected to the third pad region PD2.

FIG. 32 is a plan view illustrating another configuration of a coil inaccordance with first application example of the present embodiment. Thecoil CL2 shown in FIG. 32 has two coil portions. That is, a string ofcoil portion wound clockwise substantially centered on the first padregion PD2 and a string of coil portion wound clockwise substantiallycentered on the second pad region PD2 are prepared, and end portions onthe outside of the two coil portions are respectively connected to thethird pad region PD2.

In this manner, the coil CL2 of the upper layer having two coil portionsand three pad regions PD2 may be used. In this case, the coil CL1 of thelower layer is configured to have two coil portions in the same manneras in the coil on the upper layer. The coil having two coil portions inthis manner is referred to as “twin coil”.

FIG. 33 is a cross-sectional view illustrating main parts of asemiconductor device using the twin coil, and FIG. 34 is a plan viewillustrating the main parts of the semiconductor device using the twincoil.

As shown in FIG. 33, a distance DM4 between the coil CL2 of the upperlayer and the wiring M4 is longer than a distance DM3 between the coilCL2 of the upper layer and the wiring M3 (DM4>DM3). Moreover, a distanceDM3 between the coil CL2 of the upper layer and the wiring M3 is made tobe a distance between the coil CL2 of the upper layer and the coil CL1of the lower layer (sum of film thicknesses of the interlayer insulatorsIL3 and IL4, for example, about 5 μm) or more.

A line L1 shown in FIG. 34 forms a frame indicating a space between thecoil CL2 of the upper layer and the wiring M4. A line L2 forms a frameindicating a space between the coil CL2 of the upper layer and thewiring M3. In other words, the wiring M4 is disposed on an outer side(region on a side opposite to the coil CL2 side) from the line L1, andthe wiring M3 is disposed on an outer side from the line L1.

In this manner, the distance DM4 between the coil CL2 of the upper layerand the wiring M4 is made longer than the distance DM3 between the coilCL2 of the upper layer and the wiring M3, and the distance DM3 betweenthe coil CL2 of the upper layer and the wiring M3 is made to be adistance between the coil CL2 of the upper layer and the coil CL1 of thelower layer (sum of film thicknesses of the interlayer insulators IL3and IL4) or more. Thus, in the case of using the twin coil also, it ispossible to improve an insulation withstand voltage between the coil CL2and the wiring M4, as well as between the coil CL2 and the wiring M3,where a high voltage difference tends to be caused, in the same manneras in the first embodiment.

FIG. 35 is a plan view illustrating an example of a configuration of asemiconductor device (package) in the case of using the twin coil. Inthe semiconductor device shown in FIG. 35, the chip CH1 and the chip CH2are formed into one package. Additionally, since the same configurationas that of the second embodiment (FIG. 30) is used except that the twincoil is used as a coil, with two coil portions (not illustrated) andthree pad regions PD2 being utilized, the detailed description thereofwill be omitted.

Second Application Example

In the first embodiment, the transformer formation region 1A and thelike are designed to be surrounded by the deep trench isolation film DTIthat penetrates the silicon layer Sc so as to suppress variations in thewell electric potential of the transformer formation region 1A; however,the well electric potential of the transformer formation region 1A mayalso be fixed.

FIG. 36 is a cross-sectional view illustrating main parts of aconfiguration of a semiconductor device in accordance with a secondapplication example of the present embodiment. As shown in FIG. 36, inthe semiconductor device of the second application, an n-type well NW isformed in the silicon layer Sc of the transformer formation region 1A.

Moreover, an n-type semiconductor region NL is formed in this n-typewell NW, and this n-type semiconductor region NL is connected to thewiring M1 through the plug P1. For example, a ground potential line andthe n-type semiconductor region NL are connected to each other throughthe wiring M1. Thus, the n-type well NW of the transformer formationregion 1A is fixed to the ground potential. In this manner, by formingthe transformer formation region 1A into a configuration beingsurrounded by the deep trench isolation film DTI penetrating the siliconlayer Sc and also by setting the n-type well NW of the transformerformation region 1A to a predetermined electric potential (for example,ground potential), variations in the capacity between the coil CL1 ofthe lower layer and the p-type well PW can be further reduced, therebymaking it possible to improve transmission precision of an electricsignal between the coils and also to stabilize operations.

The n-type semiconductor region NL can be formed, for example, by usingthe same ion implanting process as that of the source-drain region SD ofthe MISFET (NT) explained in the first embodiment. Moreover, the plug P1to be connected to the n-type semiconductor region NL and the wiring M1can be formed in the same manner as in the plug P1 and the wiring M1explained in the first embodiment.

Moreover, a predetermined electric potential (for example, groundpotential) may also be applied to the support substrate Sa. In thismanner, by fixing the electric potential of the support substrate Sa tothe predetermined electric potential (for example, ground potential),variations in the well electric potential of the transformer formationregion 1A can also be reduced.

Moreover, by setting all the n-type semiconductor region NL, the n-typewell NW and the silicon layer Sc to the n-type, the fixed electricpotential can be more firmly maintained. Furthermore, by setting theregions corresponding to the n-type semiconductor region NL, the n-typewell NW and the silicon layer Sc to the p-type also, it is possible tofirmly maintain the fixed electric potential.

Third Application Example

FIG. 37 is a plan view illustrating a configuration of a coil inaccordance with a third application example of the present embodiment.The coil CL2 shown in FIG. 37 has two coil portions. That is, a stringof coil portion wound clockwise substantially centered on the first padregion PD2 and a string of coil portion wound counter-clockwisesubstantially centered on the second pad region PD2 are prepared, andend portions on the outside of the two coil portions are respectivelyconnected to the third pad region PD2.

Moreover, in FIG. 37, the shape of the pad region PD2 is set to anoctagonal shape. In this manner, by setting the shape of one roll of acoil to the octagonal shape, the shape of the pad region PD2 disposedinside thereof may also be set to an octagonal shape so as to correspondto the shape of the roll of a coil. Furthermore, the pad region PD2 tobe installed between the two coil portions may be set to an octagonalshape so as to correspond to the roll shape of the outermostcircumference of the two coils.

In this manner, by forming the shape of the pad region PD2 to bedisposed inside the coil portion as well as between the coils into ashape corresponding to the shape of the roll of the coil, it becomespossible to reduce the area of the coil.

Additionally, in the present application example, the shape of the padregion PD2 is exemplified as an octagonal shape; however, anotherpolygonal shape having more sides than those of a square shape, such asa hexagonal shape, may be used. Moreover, in the polygonal shape, such ashape having a small difference between the lengths of the respectivesides, which is closer to a regular pentagonal shape, is preferablyused.

Fourth Application Example

In the present application example, an explanation will be given to theshape of the opening portion OA1 on the pad region PD1. FIGS. 38A and38B are diagrams showing a relationship between the shape of the openingon the pad region and the shape of the wiring. FIG. 38A shows a state inwhich the planar shape of the opening portion OA1 on the pad region PD1is formed into an octagonal shape, and FIG. 38B shows a state in whichthe planar shape of the opening portion OA1 on the pad region PD1 isformed into a square shape.

As shown in FIG. 38B, in the case when the planar shape of the openingportion OA1 on the pad region PD1 is formed into the square shape, thewiring M4 is formed into an overhang shape at each of corner portions(C-C portions) of the square shape, with the result that the insulatingfilm (in this case, silicon nitride film PROa) covering the wiring M4tends to have a crack. On the other hand, the film thickness differencein the wiring M4 is small along the straight portions (B-B portions) ofthe square shape.

In contrast, in the case when the planar shape of the opening portionOA1 on the pad region PD1 is formed into an octagonal shape as shown inFIG. 38A, the overhang shape of the wiring M4 is improved on each of thecorner portions (C-C portions) of the octagonal shape so that the shapedifference relative to each of the straight portions (B-B portions) ofthe octagonal shape is mitigated.

In this manner, by forming the planar shape of the opening portion OA1on the pad region PD1 into another polygonal shape having more sidesthan those of the square shape, such as an octagonal shape, a hexagonalshape or the like, the angle of the corner can be made greater, therebymaking it possible to reduce the occurrence of cracks at the cornerportions of the insulating film (in this case, silicon nitride filmPROa).

In particular, in the case when the film thickness of the insulatingfilm between the coils CL1 and CL2 is made greater so as to ensure aproper insulation withstand voltage between the coils CL1 and CL2, theplanar shape of the opening portion OA1 on the pad region PD1 has to bemade larger and deeper. For this reason, since with respect to theplanar shape of the opening portion OA1 on the pad region PD1, the ratioof the corner portions to be formed into a round shape becomes smallerin comparison with that of the straight line portions, a crack tends toeasily occur at the corner portion of the insulating film (in this case,silicon nitride film PROa). Moreover, in the case when an Al material isused as the material for the wiring M4, since the Al material is softerthan the insulating film (in this case, silicon nitride film PROa) to beformed on the upper portion thereof, the change in the insulating film(in this case, silicon nitride film PROa) fails to follow the change inthe Al material, easily causing a crack.

In contrast, by forming the planar shape of the opening portion OA1 onthe pad region PD1 into a polygonal shape having more sides than thoseof the square shape, it becomes possible to make the angle of each ofcorner portions greater, and consequently to reduce the occurrence of acrack in the insulating film at each of the corner portions.

FIG. 39 is a diagram illustrating a cross-sectional shape of the openingon the pad region. As explained with reference to FIG. 38B, in the casewhen the planar shape of the opening portion OA1 on the pad region PD1is formed into a square shape, the wiring M4 is formed into an overhangshape at each of corner portions (C-C portions), with the result thatthe insulating film (in this case, silicon nitride film PROa) coveringthe wiring M4 tends to have a crack. Therefore, as shown in FIG. 39, theupper portion of the side face of the opening portion OA1 may be formedinto a tapered shape. In other words, a tapered face TP is formed on theupper portion of the side face of the opening portion OA1. The angle(taper angle) between the tapered face TP and the wiring M3 is set to,for example, about 45°, and is more preferably adjusted in a range from20° or more to 90° or less.

In this manner, by forming the upper portion of the side face of theopening portion OA1 into a tapered shape, it becomes possible to reducethe occurrence of a crack in the insulating film (in this case, siliconnitride film PROa) covering the wiring M even when the planar shape ofthe opening portion OA1 has a square shape.

In order to form the upper portion of the side face of the openingportion OA1 into a tapered shape in this manner, for example, after inthe above-mentioned etching process, the interlayer insulator IL4 hasbeen etched by its film thickness corresponding to about 0.2 μm to 0.3μm (in this case, 0.25 μm (about 3%)) by a wet etching process with aphotoresist film (not illustrated) being used as a mask, the remaininginterlayer insulator IL4 is etched until the wiring M3 (pad region PD1)has been exposed by a dry etching process with a photoresist film beingused as a mask. For example, in the wet etching process, a hydrofluoricacid solution (hydrofluoric acid) is used, and in the dry etchingprocess, a fluorine-based gas may be used.

Additionally, the entire side face of the opening portion OA1 may beformed into a tapered shape. Moreover, with the planar shape of theopening portion OA1 being formed into an octagonal shape, the upperportion of the side face of the opening portion OA1 may be formed into atapered shape.

Fourth Embodiment

In the present embodiment, an explanation will be given to a dummywiring for use in dividing the HDP film IL4 a or the interlayerinsulator IL4. FIG. 40 is a cross-sectional view illustrating aconfiguration of a semiconductor device of the present embodiment. FIG.41 is a plan view illustrating a shape of the dummy wiring of thesemiconductor device of the present embodiment. Since the configurationsother than the dummy wiring DMM3 are the same as those of the firstembodiment, the detailed explanation thereof will be omitted.

As shown in FIG. 40, in the present embodiment, the dummy wiring DMM3that is a wiring on the same layer as the wiring M3 is disposed in theelement formation region BE. As shown in FIG. 41, for example, theplanar shape of the dummy wiring DMM3 may be formed into a latticeshape. For example, the dummy wiring DMMs is formed into a lattice shapein a manner so as to surround block areas BA of the plural logiccircuits forming a peripheral circuit. Elements such as MISFETs (NT, PT)and the like are formed in the block areas BA.

By forming the dummy wiring DMM3 in this manner, the HDP film IL4 a canbe divided so that a film stress caused by the HDP film IL4 a can bemitigated. Additionally, the planar shape of the dummy wiring DMM3 isnot necessarily limited by the above-mentioned lattice shape, and may beplaced in a scattered manner by utilizing the gaps between the blockareas BA of the logic circuit. The dummy wiring DMM3 of this type isused for wire-connecting the semiconductor elements such as MISFETs orthe like, and is not used for forming logic circuits. Therefore, thewiring does not contribute to circuit operations, and the dummy wiringDMM3 is fixed to a floating state or a predetermined electric potential.

FIG. 42 is a cross-sectional view illustrating another configuration ofthe semiconductor device of the present embodiment. The semiconductordevice shown in FIG. 42 is provided with stacked wirings composed of thedummy wiring DMM3 that is a wiring on the same layer as the wiring M3and the dummy wiring DMM4 that is a wiring on the same layer as thewiring M4. By installing the dummy wirings (DMM3, DMM4) composed ofstacked wirings, the entire interlayer insulator IL4 can be divided sothat a film stress caused by the interlayer insulator IL4 formed with acomparatively thick thickness can be mitigated. The planar shape of thedummy wirings (DMM3, DMM4) composed of stacked wirings is notparticularly limited, and is formed into, for example, a lattice shapeshown in FIG. 41.

Fifth Embodiment

FIG. 43 is a block diagram illustrating a configuration of asemiconductor device in accordance with the present embodiment. FIG. 44and FIG. 45 are plan views showing a configuration of the semiconductordevice of the present embodiment. FIG. 44 shows a configuration in whichthe signal coil explained in the first embodiment is used, and FIG. 45shows a configuration in which the twin coil explained in the thirdembodiment is used.

In the same manner as that in the second embodiment, in thesemiconductor devices shown in FIG. 43 and FIG. 44 as well, the chip CH1and the chip CH2 are formed into one package.

As shown in FIG. 43 and FIG. 44, the chip CH1 is provided with atransformer composed of a coil CL1 connected to a transmission circuitTx and a coil CL2. The coil CL2 is connected to a receiving circuit Rxof the chip CH2 with the pad region PD2 and the wire W interposedtherebetween.

Moreover, in the same manner as in the second embodiment, the chip CH1is provided with the receiving circuit Rx and the logic circuit Logic.The logic circuit Logic is connected to the transmission circuit Tx andthe receiving circuit Rx of the chip CH1, and the logic circuit Logic isconnected to the plural pad regions PD2.

In the same manner as in the second embodiment, the chip CH2 is providedwith a transformer composed of a coil CL4 connected to the transmissioncircuit Tx and a coil CL3. The coil CL3 is connected to a receivingcircuit Rx of the chip CH1 with the pad region PD2 and the wire Winterposed therebetween. Moreover, the chip CH2 is provided with thereceiving circuit Rx and the logic circuit Logic. The logic circuitLogic is connected to the transmission circuit Tx and the receivingcircuit Rx of the chip CH2, and the logic circuit Logic is connected tothe plural pad regions PD2.

To the semiconductor device of the present embodiment, a function fortransmitting and receiving a temperature control signal is added, andtransformers (CL5, CL6), a receiving circuit Rxa and a transmissioncircuit Txa are installed. Additionally, since the other configurationsare the same as those of the second embodiment, the detailed descriptionthereof will be omitted.

That is, to the chip CH2, a transformer composed of the coil CL6connected to the transmission circuit Txa and the coil CL5 is furtheradded. Moreover, the transmission circuit Txa is further added to thechip CH2. The transmission circuit transmits a temperature controlsignal.

In this manner, in the present embodiment, two transformers areinstalled on the chip CH2 on a high voltage region HC side, and onetransformer (CL1, CL2) is installed on the chip CH1 on a low voltageregion LC side. The chip CH2 is larger than the chip CH1.

In the present embodiment, in the chip CH1, one transformer is disposedsubstantially in the center portion along the long side of the chip CH1,and a receiving circuit Rx of the chip CH2 to be connected to thetransformer is disposed substantially in the center portion along thelong side of the chip CH2. Moreover, the two transformers of the chipCH2 are disposed on the both sides of the receiving circuit Rx disposedsubstantially in the center portion along the long side of the chip CH2.Moreover, on the both sides of the transformer disposed substantially inthe center portion along the long side of the chip CH1, two receivingcircuits Rx and Rxa are disposed. The two transformers of the chip CH2and the two receiving circuits Rx and Rxa of the chip CH1 are disposedso as to be made face to face with each other.

As shown in FIG. 43, for example, a temperature control signal outputtedfrom the temperature sensor of an IGBT circuit is inputted to the chipCH2 through the pad region PD2. This temperature control signal isinputted to a logic circuit Logic through a control circuit CC, andfurther transmitted to the transmission circuit TXa. Moreover, thetemperature control signal is inputted to the receiving circuit Rxa ofthe chip CH2 through the transformer composed of the coils CL5 and CL6.

In this manner, in the case when the three transformers are provided,the pad region PD2 on the transmission side, that is, the pad region PD2connected to the transformer, and the pad region PD2 on the receivingside, that is, the receiving circuit Rx, are disposed so as to becorrespondingly combined with each other. Thus, wires W for use inconnecting the pad region PD2 on the transmission side and the padregion PD2 on the receiving side are prevented from crossing each otherand consequently prevented short circuits from occurring between thewires W, and the connection by the wires can be easily carried out.Moreover, the electrical connection can be made by using short wires W.

The same effect can be obtained in the case of using the twin coil shownin FIG. 45. That is, in the chip CH1, one transformer is disposedsubstantially in the center portion along the long side of the chip CH1,and the receiving circuit Rx of the chip CH2 to be connected to thistransformer is disposed substantially in the center portion along thelong side of the chip CH2. Moreover, the two transformers of the chipCH2 are disposed on the both sides of the receiving circuit Rx disposedsubstantially in the center portion along the long side of the chip CH2.Furthermore, the two receiving circuits Rx and Rxa are disposed on theboth sides of the transformer disposed substantially in the centerportion along the long side of the chip CH1. The two transformers of thechip CH2 and the two receiving circuits Rx and Rxa of the chip CH1 arerespectively disposed so as to be made face to face with each other.Even in the case of using the twin coil, by adopting the above-mentionedlayout, it is possible to prevent the wires W from being disposed in acrossing manner, and consequently to make an electrical connection byusing short wires W. Additionally, the use of the single coil is moreadvantageous than the use of the twin coil from the viewpoint ofreducing the area of the semiconductor device.

For example, in the first embodiment, the wirings M1 to M3 are formed byusing a patterning process; however, by using a so-called “damascenemethod” in which a conductive film is buried in wiring grooves formed inthe interlayer insulating film, the wirings M1 to M3 may be formed.

Moreover, in first embodiment, explanations have been given byexemplifying the SOI substrate; however, a so-called “bulk substrate”may be used.

[Supplementary Note 1]

A semiconductor device including:

a substrate having a first region, a second region and a third regionthat surrounds the first region and the second region;

a first insulating film formed on the upper portion of the substrate;

a first coil and a first wiring formed on the first insulating film;

a second insulating film formed on the first coil and the first wiring;

a second wiring formed on the second insulating film;

a third insulating film formed on the second wiring; and

a second coil and a third wiring formed on the third insulating film,

in which the first coil and the second coil are formed in the firstregion, the second wiring and an active element connected to the secondwiring are formed in the second region, and a first surrounding wiringwhich is formed into a shape so as to surround the first region and thesecond region and formed of a wiring formed as the same layer as thesecond wiring, is further prepared in the third region.

[Supplementary Note 2]

The semiconductor device according to Supplementary Note 1, furtherincluding: a second surrounding wiring which is formed on the firstsurrounding wiring, and is formed on the third region into a shape so asto surround the first region and the third region, and formed of awiring formed as the same layer as the third wiring.

[Supplementary Note 3]

A semiconductor device including: a first semiconductor chip and asecond semiconductor chip, in which the first semiconductor chipincludes:

a first transmission circuit;

a first transformer having a first coil connected to the firsttransmission circuit and a second coil;

a first receiving circuit;

a first receiving pad connected to the first receiving circuit;

a second receiving circuit; and

a second receiving pad connected to the second receiving circuit, andthe second semiconductor chip comprises:

a third receiving circuit;

a third receiving pad connected to the third receiving circuit;

a second transmission circuit;

a second transformer having a third coil connected to the secondtransmission circuit and a fourth coil;

a third transmission circuit; and

a third transformer having a fifth coil connected to the thirdtransmission circuit and a sixth coil, and

in the semiconductor device, the first receiving pad and the secondreceiving pad are disposed on the both sides of the second coil of thefirst semiconductor chip, the fourth coil and the sixth coil aredisposed on the both sides of the third receiving pad of the secondsemiconductor chip, with the second coil and the third receiving padbeing electrically connected to each other through a first conductiveconnecting member, with the fourth coil and the first receiving padbeing electrically connected to each other through a second conductiveconnecting member, and with the sixth coil and the second receiving padbeing electrically connected to each other through a third conductiveconnecting member, so that the first connecting member, the secondconnecting member and the third connecting member are prevented fromcrossing one after another.

-   -   1A Transformer formation region    -   1B Peripheral circuit formation region    -   1C Seal ring formation region    -   BA Block area    -   BE Element formation region    -   BP Pad formation region    -   CC Control circuit    -   CH1 Chip    -   CH2 Chip    -   CL1 Coil    -   CL2 Coil    -   CL3 Coil    -   CL4 Coil    -   CL5 Coil    -   CL6 Coil    -   DM3 Distance    -   DMM3 Dummy wiring    -   DMM4 Dummy wiring    -   DP1 Die pad    -   DP2 Die pad    -   DM4 Distance    -   DT Groove    -   DT1 Deep trench isolation film    -   GE Gate electrode    -   GI Gate insulating film    -   HC High voltage region    -   IL1 Interlayer insulator    -   IL2 Interlayer insulator    -   IL3 Interlayer insulator    -   IL4 Interlayer insulator    -   IL4 a HDP film    -   IL4 b P-TEOS film    -   IL4 c P-TEOS film    -   L1 Line    -   L2 Line    -   LC Low voltage region    -   M1 Wiring    -   M2 Wiring    -   M3 Wiring    -   M4 Wiring    -   NT MISFET    -   NW n-type well    -   OA Opening    -   OA1 Opening    -   OA2 Opening    -   P1 Plug    -   P2 Plug    -   P3 Plug    -   PC Peripheral circuit    -   PD1 Pad region    -   PD2 Pad region    -   PL p-type semiconductor region    -   PRO Protective film    -   PROa Silicon nitride film    -   PROb Polyimide film    -   PT MISFET    -   Rx Receiving circuit    -   Rxa Receiving circuit    -   PW p-type well    -   S Substrate    -   Sa support substrate    -   Sb Insulating layer    -   Sc Silicon layer    -   SD Source-drain region    -   ST Device isolation region    -   TP Tapered face    -   Tx Transmission circuit    -   Txa Transmission circuit    -   W Wire

What is claimed is:
 1. A semiconductor device comprising: a substrate; afirst insulating film formed on an upper portion of the substrate; afirst coil and a first wiring formed on the first insulating film; asecond insulating film formed on the first coil and the first wiring; asecond wiring formed on the second insulating film; a third insulatingfilm formed on the second wiring; and a second coil and a third wiringformed on the third insulating film, wherein a distance between thesecond coil and the third wiring is longer than a distance between thesecond coil and the second wiring.
 2. The semiconductor device accordingto claim 1, wherein the distance between the second coil and the secondwiring is set to be longer than a sum of film thicknesses of the secondinsulating film and the third insulating film that are positionedbetween the first coil and the second coil.
 3. The semiconductor deviceaccording to claim 2, wherein each of the second wiring, the second coiland the third wiring is a film containing aluminum.
 4. The semiconductordevice according to claim 3, wherein each of the second wiring, thesecond coil and the third wiring has a film thickness of 3 μm or more.5. The semiconductor device according to claim 4, wherein each of thesecond insulating film and the third insulating film is formed of aninorganic insulating film.
 6. The semiconductor device according toclaim 5, wherein a sum of film thicknesses of the second insulating filmand the third insulating film that are positioned between the first coiland the second coil is 5 μm or more.
 7. The semiconductor deviceaccording to claim 1, wherein the third insulating film includes a firstfilm formed between the second wirings and a second film formed on thefirst film.
 8. The semiconductor device according to claim 1, whereinthe second coil includes a first pad and a coil portion surrounding thefirst pad, and the first pad has a planar shape formed into a polygonalshape having more sides than those of a square shape.
 9. Thesemiconductor device according to claim 1, wherein the second wiring andthe third wiring are connected to each other in an opening formed in thethird insulating film, and the opening has a planar shape formed into apolygonal shape having more sides than those of a square shape.
 10. Asemiconductor device comprising: a substrate; a first insulating filmformed on an upper portion of the substrate; a first coil and a firstwiring formed on the first insulating film; a second insulating filmformed on the first coil and the first wiring; a second wiring and afirst dummy wiring formed on the second insulating film; a thirdinsulating film formed on the second wiring and the first dummy wiring;and a second coil and a third wiring formed on the third insulatingfilm, wherein the third insulating film has a first film formed betweenthe second insulating film and the first dummy wiring and a second filmformed on the first film.
 11. The semiconductor device according toclaim 10, wherein a distance between the second coil and the thirdwiring is set to be longer than a distance between the second coil andthe second wiring.
 12. The semiconductor device according to claim 11,wherein the distance between the second coil and the second wiring isset to be longer than a sum of film thicknesses of the second insulatingfilm and the third insulating film that are positioned between the firstcoil and the second coil.
 13. The semiconductor device according toclaim 12, wherein each of the second wiring, the second coil, the thirdwiring and the first dummy wiring is a film containing aluminum.
 14. Thesemiconductor device according to claim 13, wherein each the secondinsulating film and the third insulating film is formed of an inorganicinsulating film.
 15. A semiconductor device comprising: a substratehaving a first region and a second region and including a semiconductorsubstrate, an insulating layer formed on the semiconductor substrate,and a semiconductor layer formed on the insulating layer; a firstinsulating film formed on an upper portion of the substrate; a firstcoil and a first wiring formed on the first insulating film; a secondinsulating film formed on the first coil and the first wiring; a secondwiring formed on the second insulating film; a third insulating filmformed on the second wiring; and a second coil and a third wiring formedon the third insulating film, wherein the first coil and the second coilare formed in the first region, and the second wiring and an activeelement connected to the second wiring are formed in the second region,the semiconductor device further comprising: a first groove which isformed along an outer periphery of the first region, and penetrates thesemiconductor to reach the insulating layer; and a fourth insulatingfilm formed inside the first groove.
 16. The semiconductor deviceaccording to claim 14, further comprising: a second groove which isformed along an outer periphery of the second region, and penetrates thesemiconductor to reach the fourth insulating film; and a fifthinsulating film formed inside the second groove.
 17. The semiconductordevice according to claim 15, wherein a distance between the second coiland the third wiring is set to be longer than a distance between thesecond coil and the second wiring.
 18. The semiconductor deviceaccording to claim 17, wherein the distance between the second coil andthe second wiring is set to be longer than a sum of film thicknesses ofthe second insulating film and the third insulating film that arepositioned between the first coil and the second coil.
 19. Thesemiconductor device according to claim 18, wherein each of the secondwiring, the second coil and the third wiring is a film containingaluminum.
 20. The semiconductor device according to claim 19, whereineach of the second insulating film and the third insulating film isformed of an inorganic insulating film.